| PART |
Description |
Maker |
| HY62LF16406D-SF HY62LF16406D-SFI HY62LF16406D-DF H |
256Kx16bit full CMOS SRAM
x16 SRAM
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| HY62LF16404C HY62LF16404C-I |
x16|2.5V|70/85|Super Low Power Slow SRAM - 4M x16 | 2.5V的| 70/85 |超级低功耗SRAM的速度 4
256Kx16bit full CMOS SRAM
|
Alpha Industries, Inc.
Hynix Semiconductor
|
| HY62SF16806A-DMC HY62SF16806A-DMI HY62SF16806A-SMI |
x16|1.8V|70/85/100|Super Low Power Slow SRAM - 8M x16 | 1.8 | 70/85/100 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
Alpha Industries, Inc.
Hynix Semiconductor
|
| LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
| WMS256K16-20DLM WMS256K16-25DLM WMS256K16-35DLM WM |
20ns; 256K x 16 monilithic SRAM, SMD 5962-96902
x16 SRAM
|
White Electronic Designs
|
| M76DW52004TA M76DW52004TA70Z M76DW52004TA70ZT |
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
ST Microelectronics
|
| KM6164002A KM6164002AJ-1500 |
256K X 16 STANDARD SRAM, 15 ns, PDSO44
From old datasheet system
x16 SRAM
|
Samsung
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| M36W216TI-ZAT M36W216BIZA M36W216TIZA M36W216TI70Z |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体兆位128KB的x16的SRAM，多个存储产
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product 16兆x16插槽，开机区块快闪记忆体2兆位128KB的x16的SRAM，多个存储产
PV76L14-18P
|
http://
STMicroelectronics N.V.
意法半导
|
| HM62A168BCP-25 HM62A188CP-25 |
x16 SRAM x16的SRAM
x18 SRAM
|
Hoffman
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
